Flash evaporated layers of (Bi2Te3-Bi2Se3)(N) and (Bi2Te3-Sb2Te3)(P)

被引:67
作者
Foucaran, A [1 ]
Sackda, A [1 ]
Giani, A [1 ]
Pascal-Delannoy, F [1 ]
Boyer, A [1 ]
机构
[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier 05, France
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 52卷 / 2-3期
关键词
flash evaporation technique; micromodule Peltier; P-type;
D O I
10.1016/S0921-5107(98)00108-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
(Bi2Te3)(0.9)(Bi2Se3)(0.1) for N-type material powder and (Bi2Te3)(0.25)(Sb2Te3)(0.75) for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21 X 10(-4) K-1 for alpha = 40 mu VK-1 and rho = 50 mu Ohm . m for P-type material and Z of about 0.17 X 10(-3) K-1 for alpha = 90 mu VK-1 and rho = 30 mu Ohm . m for N-type material (at 300 K), for 1 mu m layer thickness deposited over polyimide substrate, before annealing. We show that after annealing at 250 degrees C under He atmosphere, the figure of merit of the layers increases to Z = 3.2 X 10(-3) K-1 for alpha = 240 mu VK-1 and rho = 12 mu Ohm . m for P-type material and Z = 1.6 X 10(-3)K(-1) for alpha = 200 mu VK-1 and rho = 15 mu Ohm . m for N-type material (at 300 K). With these fabrication parameters, we realised three different structures of micromodule Peltier (MMP) junction and we obtained a maximum value for temperature drop between hot and cold sides of approximate to 3.4 K. This result is very promising in order to develop MMP. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:154 / 161
页数:8
相关论文
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