A closed-form DC model for long-channel thin-film transistors with gate voltage-dependent mobility characteristics

被引：15

作者：

Hoffman, RL ^{[1
]}

机构：

[1] Hewlett Packard Corp, Corvallis, OR 97330 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 04期

关键词：

thin-film transistor model; gate voltage-dependent mobility;

D O I：

10.1016/j.sse.2004.12.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is derived for the drain current (under DC steady-state operating conditions) of a long-channel thin-film transistor (TFT) with gate voltage-dependent channel mobility. A closed-form expression is obtained for cases in which the average mobility (mu(avg)) can be reasonably approximated by an nth-order polynomial curve fit; a more generalized expression allows the substitution of an arbitrary parameterized equation for mu(avg), yielding a closed-form expression in cases where the form of the selected mobility expression is such that the requisite integration can be carried out analytically. The model is employed to replicate measured drain current versus drain voltage (I-D-V-DS) curves for exemplary zinc oxide and zinc tin oxide channel TFTs with highly non-ideal (i.e., gate voltage-dependent) mobility characteristics; in each case, excellent correlation to measured I-D-V-DS data is obtained, thus validating the proposed model. This model comprises a valuable tool in the preliminary development of novel TFTs for which standard device models are not, in general, appropriate. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：648 / 653

页数：6

共 13 条

[1]

[Anonymous], 1998, Introduction to device modeling and circuit simulation

[2] Field-effect transistors made from solution-processed organic semiconductors [J].