Highly aligned carbon nanotube arrays fabricated by bias sputtering

被引:13
作者
Hayashi, N [1 ]
Honda, S [1 ]
Tsuji, K [1 ]
Lee, KY [1 ]
Ikuno, T [1 ]
Fujimoto, K [1 ]
Ohkura, S [1 ]
Katayama, M [1 ]
Oura, K [1 ]
Hirao, T [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
关键词
aligned carbon nanotube; dc bias sputtering; bamboo-like structure;
D O I
10.1016/S0169-4332(03)00121-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of. 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:393 / 396
页数:4
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