Domain wall motion induced by spin polarized currents in ferromagnetic ring structures

被引:164
作者
Kläui, M
Vaz, CAF
Bland, JAC
Wernsdorfer, W
Faini, G
Cambril, E
Heyderman, LJ
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] CNRS, Lab Louis Neel, F-38274 Grenoble, France
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
关键词
D O I
10.1063/1.1588736
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an experimental study of the influence of spin-polarized currents on the displacement of domain walls in submicrometer permalloy ring structures. Using magnetoresistance (MR) measurements with multiple nonmagnetic contacts, we can sense the displacement of a domain wall and, by injecting large dc current densities (10(11) A/m(2)), we can increase or decrease the magnetic field needed to move a single domain wall, depending on the direction of the current with respect to the applied field direction. Using rings with and without notches and by measuring the MR with the magnetic field applied along different directions, we show that we can exclude the possibility that the dominating effect is a classical Oersted field. We conclude that our observations can be explained by a directional spin torque effect. (C) 2003 American Institute of Physics.
引用
收藏
页码:105 / 107
页数:3
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