Crystal growth and characterizations of highly oriented BiFeO3 thin films

被引：39

作者：

Lee, YH ^{[1
]}

Liang, CS ^{[1
]}

Wu, JM ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 11期

关键词：

D O I：

10.1149/1.2063307

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

BiFeO3 (BFO) films of pure perovskite phase were deposited on Pt/TiOx/SiO2/Si Pt, LaNiO3/Pt/Tix/SiO2/Si (LNO), and BaPbO3/Pt/TiOx/SiO2/Si (BPO) substrates by rf magnetron sputtering. The BFO film was grown with random orientations on Pt whereas highly (100)-oriented and (111)-oriented ones were obtained on LNO and BPO, respectively. The influence of the bottom electrode on crystal growth, surface topography, leakage behavior, dielectric and ferroelectric properties was investigated. Twice remnant polarizations (2Pr) and coercive fields (2Ec) of the (100)-oriented BFO film were measured to be about 100 mu C/cm(2) and 596 kV/cm, while those of (111)-oriented ones were approximately 205 mu C/cm(2) and 675 kV/cm. (c) 2005 The Electrochemical Society.

引用

页码：F55 / F57

页数：3

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