Mott insulating ground state on a triangular surface lattice

被引：84

作者：

Weitering, HH

Shi, X

Johnson, PD

Chen, J

DiNardo, NJ

Kempa, K

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973

[3] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104

[4] DREXEL UNIV,DEPT PHYS & ATMOSPHER SCI,PHILADELPHIA,PA 19104

[5] UNIV PENN,DEPT MAT SCI & ENGN,PHILADELPHIA,PA 19104

[6] BOSTON COLL,DEPT PHYS,CHESTNUT HILL,MA 02167

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.78.1331

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Momentum-resolved direct and inverse photoemission spectra of the K/Si(111)-(root 3 x root 3)R30 degrees-B interface reveals the presence of strongly localized surface states, The K overlayer remains nonmetallic up to the saturation coverage. This system most likely presents the first experimental realization of a frustrated spin 1/2 Heisenberg antiferromagnet on a two-dimensional triangular lattice.

引用

页码：1331 / 1334

页数：4

共 26 条

[1] NEW MECHANISM FOR 2X1 RECONSTRUCTION OF SILICON (111) SURFACE [J].