Synthesis and dielectric properties of cubic GaN nanoparticles

被引：37

作者：

Wang, WY

Xu, YP

Zhang, DF

Chen, XL

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2001年 / 36卷 / 12期

基金：

中国国家自然科学基金;

关键词：

nitrides; semiconductors; chemical synthesis; dielectric properties;

D O I：

10.1016/S0025-5408(01)00700-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic GaN nanoparticles were synthesized directly from reactions of metal Ga and NH4I in liquid ammonia in an autoclave at about 300 degreesC. The influence of the reacting temperature, the kind, and content of mineralizer on the synthesis of pure cubic GaN was studied. Dielectric properties of the GaN nanoparticles were measured on LRC meters under the frequency range of 120 Hz to 10 MHz and the temperature range of 23 to 650 degreesC. It is found that there are three characteristics of the dielectric behavior for the nanoparticles of cubic GaN. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：2155 / 2162

页数：8

共 7 条

[1] Probing the local dielectric optical properties of group III-Nitrides by spatially resolved EELS on the nanometer scale [J].