Dielectric properties of wurtzite and zincblende structure Gallium nitride

被引：36

作者：

Wang, R ^{[1
]}

Ruden, PP ^{[1
]}

Kolnik, J ^{[1
]}

Oguzman, I ^{[1
]}

Brennan, KF ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH ELECT & COMP ENGN,ATLANTA,GA 30332

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1997年 / 58卷 / 06期

基金：

美国国家科学基金会;

关键词：

electronic materials; semiconductors; dielectric properties; electronic structure;

D O I：

10.1016/S0022-3697(96)00219-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The (q) over right arrow-dependent static dielectric functions, epsilon(infinity), ((q) over right arrow), are found to be similar for the two crystal modifications. The optical dielectric functions, epsilon(infinity) (omega), however, are different in the range 6 eV < (h) over bar omega < 12 eV. We also evaluate the indices of refraction in the frequency range near the fundamental bandgaps and the absorption coefficients above the bandgaps for both modifications of GaN. The results are in good agreement with experimental data. The birefringence of wurtzite GaN is briefly discussed. (C) 1997 Elsevier Science Ltd.

引用

页码：913 / 918

页数：6

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