Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)

被引：40

作者：

Negoro, Y ^{[1
]}

Miyamoto, N ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 02期

关键词：

D O I：

10.1063/1.1432745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-dose ion implantation of phosphorus into 4H-SiC has been investigated. Phosphorus ion implantation with a 1x10(16) cm(-2) dose at 800 degreesC into 4H-SiC (0001) has resulted in a sheet resistance of 80 Omega/square after annealing at 1700 degreesC. A similar sheet resistance of 110 Omega/square was achieved even by room-temperature implantation when 4H-SiC (11 (2) over bar0) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Omega/square by 800 degreesC implantation into 4H-SiC (11 (2) over bar0) followed by annealing at 1700 degreesC. 4H-SiC (11 (2) over bar0) showed a very flat surface after annealing. (C) 2002 American Institute of Physics.

引用

页码：240 / 242

页数：3

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