Preparation of AlN fine powder by thermal plasma processing

被引:44
作者
Oh, SM [1 ]
Park, DW [1 ]
机构
[1] Inha Univ, Dept Chem Engn, Nam Gu, Inchon 402751, South Korea
关键词
thermal plasma; aluminum nitride;
D O I
10.1016/S0040-6090(98)00413-1
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
Ultra-fine powders of aluminum nitride were produced by non-transferred are plasma at atmospheric pressure. Chemical equilibrium compositions were calculated for various reaction systems. X-ray diffraction patterns of the powder synthesized in the cold-wall reactor were observed with weak peak intensity of aluminum nitride. It should be due to amorphous ALN as shown in FTIR spectra. Powder synthesized in the hot-wall reactor was observed with AIN crystal. In the high-temperature region, the degree of reaction was independent of NH3 gas injected. However, it was increased by injecting NH3 gas at the low-temperature region. Particle size was measured to be from 50 nm to 350 nm. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:189 / 194
页数:6
相关论文
共 18 条
[1]
SYNTHESIS OF ALUMINUM NITRIDE IN TRANSFERRED ARE PLASMA FURNACES [J].
AGEORGES, H ;
MEGY, S ;
CHANG, K ;
BARONNET, JM ;
WILLIAMS, JK ;
CHAPMAN, C .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1993, 13 (04) :613-632
[2]
SYNTHESIS AND PROPERTIES OF ULTRAFINE AIN POWDER BY RF PLASMA [J].
BABA, K ;
SHOHATA, N ;
YONEZAWA, M .
APPLIED PHYSICS LETTERS, 1989, 54 (23) :2309-2311
[3]
NITRIDATION CHARACTERISTICS OF FLOATING ALUMINUM POWDER [J].
CHANG, AJ ;
RHEE, SW ;
BAIK, S .
JOURNAL OF MATERIALS SCIENCE, 1995, 30 (05) :1180-1186
[4]
LATTICE VIBRATION SPECTRA OF ALUMINUM NITRIDE [J].
COLLINS, AT ;
LIGHTOWLERS, EC ;
DEAN, PJ .
PHYSICAL REVIEW, 1967, 158 (03) :833-+
[5]
CHEMSAGE - A COMPUTER-PROGRAM FOR THE CALCULATION OF COMPLEX CHEMICAL-EQUILIBRIA [J].
ERIKSSON, G ;
HACK, K .
METALLURGICAL TRANSACTIONS B-PROCESS METALLURGY, 1990, 21 (06) :1013-1023
[6]
FORMATION OF ALUMINUM NITRIDES IN THERMAL PLASMAS [J].
ETEMADI, K .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1991, 11 (01) :41-56
[7]
GASKELL DR, 1981, INTRO METALLURGICAL, P248
[8]
PLASMA CVD OF AMORPHOUS AIN FROM METALORGANIC AL SOURCE AND PROPERTIES OF THE DEPOSITED FILMS [J].
HASEGAWA, F ;
TAKAHASHI, T ;
KUBO, K ;
NANNICHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09) :1555-1560
[9]
HUSEBY IC, 1983, J AM CERAM SOC, V66, P217, DOI 10.1111/j.1151-2916.1983.tb10021.x
[10]
SOME PROPERTIES OF ALUMINUM NITRIDE POWDER SYNTHESIZED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
ITATANI, K ;
SANO, K ;
HOWELL, FS ;
KISHIOKA, A ;
KINOSHITA, M .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (06) :1631-1638