Photoluminescence on ordered GaxIn1-xAsyP1-y

被引：4

作者：

Oelgart, G ^{[1
]}

Knauer, A ^{[1
]}

Oster, A ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 03期

关键词：

D O I：

10.1063/1.368228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence of Ga0.54In0.46As0.12P0.88 layers grown by metalorganic vapor phase epitaxy on differently oriented GaAs substrates has been investigated, Valence-band splitting due to symmetry breaking in ordered quaternary alloys was demonstrated by room temperature photoluminescence polarization spectroscopy, Single- and two-variant ordering was identified by high resolution x-ray diffraction on samples grown on (001) GaAs substrates misoriented 2 degrees off to {1 (1) over bar 1} B and on just oriented ones, respectively. The low temperature photoluminescence spectra consist of moving and nonmoving components, typical for ordered material. The blueshift of the moving component versus the pump level for the 0 degrees samples is stronger than that for the 2 degrees B samples. The full width at half maximum of the moving component increases with increasing injection level for the 0 degrees samples, whereas it decreases for 2 degrees B samples. We suppose that this different behavior of the low temperature photoluminescence observed on single- and two-variant samples is related to different domain structures. (C) 1998 American Institute of Physics.

引用

页码：1588 / 1594

页数：7

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