Phonon softening, chaotic motion, and order-disorder transition in Sn/Ge(111) -: art. no. 016103

被引：44

作者：

Farías, D

Kaminski, W

Lobo, J

Ortega, J

Hulpke, E

Pérez, R

Flores, F

Michel, EG

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain

[3] Univ Autonoma Madrid, Dept Fis Teor Mat Condesada, E-28049 Madrid, Spain

[4] Univ Wroclaw, Inst Phys Expt, PL-50204 Wroclaw, Poland

[5] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.91.016103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The phonon dynamics of the Sn/Ge(111) interface is studied using high-resolution helium atom scattering and first-principles calculations. At room temperature we observe a phonon softening at then (K) over bar point in the (root3xroot3)R30degrees phase, associated with the stabilization of a (3x3) phase at low temperature. That phonon band is split into three branches in the (3x3) phase. We analyze the character of these phonons and find out that the low- and room-temperature modes are connected via a chaotic motion of the Sn atoms. The system is shown to present an order-disorder transition.

引用

页码：1 / 016103

页数：4

共 23 条

[1] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
Avila, J
Mascaraque, A
Michel, EG
Asensio, MC
LeLay, G
Ortega, J
Pérez, R
Flores, F
[J]. PHYSICAL REVIEW LETTERS, 1999, 82 (02) : 442 - 445
[2] Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces
Ballabio, G
Profeta, G
de Gironcoli, S
Scandolo, S
Santoro, GE
Tosatti, E
[J]. PHYSICAL REVIEW LETTERS, 2002, 89 (12) : 126803 - 126803
[3] √3X √3R30° versus adatom-rest-atom phases on (111) semiconductor surfaces
Ballabio, G
Scandolo, S
Tosatti, E
[J]. PHYSICAL REVIEW B, 2000, 61 (20) : 13345 - 13348
[4] BENEDEK G, 1992, HELIUM ATOM SCATTERI, P195
[5] Surface charge ordering transition: alpha phase of Sn/Ge(111)
Carpinelli, JM
Weitering, HH
Bartkowiak, M
Stumpf, R
Plummer, EW
[J]. PHYSICAL REVIEW LETTERS, 1997, 79 (15) : 2859 - 2862
[6] ELECTRONIC-STRUCTURE APPROACH FOR COMPLEX SILICAS
DEMKOV, AA
ORTEGA, J
SANKEY, OF
GRUMBACH, MP
[J]. PHYSICAL REVIEW B, 1995, 52 (03): : 1618 - 1630
[7] HELIUM-ATOM-SCATTERING STUDY OF THE STRUCTURE AND PHONON DYNAMICS OF THE W(001) SURFACE BETWEEN 200-K AND 1900-K
ERNST, HJ
HULPKE, E
TOENNIES, JP
[J]. PHYSICAL REVIEW B, 1992, 46 (24): : 16081 - 16105
[8] Helium scattering structure analyses of the c(2x8) reconstruction and the high-temperature (1x1) structures of Ge(111)
Farias, D
Lange, G
Rieder, KH
Toennies, JP
[J]. PHYSICAL REVIEW B, 1997, 55 (11) : 7023 - 7033
[9] Atomic beam diffraction from solid surfaces
Farías, D
Rieder, KH
[J]. REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (12) : 1575 - 1664
[10] Order-disorder transition of the (3X3) Sn/Ge(111) phase
Floreano, L
Cvetko, D
Bavdek, G
Benes, M
Morgante, A
[J]. PHYSICAL REVIEW B, 2001, 64 (07):

← 1 2 3 →