Growth mode and interface structure of ag on the HF-treated Si(111):H surface

A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300 degrees C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the root 3x root 3-Ag structure, which is normally observed for Ag deposition above 200 degrees C on the Si(111)7 x 7 surface, but retains its bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Angstrom) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 x 7 and Ag/Si(111)2 x 1.