Radiation hardness of N2O grown oxynitrides assessed using the conductance technique

被引：4

作者：

Anthony, CJ

Uren, MJ

Nayar, V

机构：

[1] Defence Research Agency, Malvern

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxynitrides on (100) silicon grown in a N2O ambient have been Co-60 gamma irradiated. The conductance technique has been used to show that irradiation under bias can produce lateral charge nonuniformities at the Si:SiO2 interface. The ratio of induced fast to slow interface state density was found to be roughly independent of bias and nitridation, suggesting a common origin for these two types of defects.

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页码：2104 / 2106

页数：3

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