ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：96

作者：

FLEETWOOD, DM

SHANEYFELT, MR

SCHWANK, JR

机构：

[1] Sandia National Laboratories, Department 1332, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple method is described that combines conventional threshold-voltage and charge-pumping measurements on n- and p-channel metal-oxide-semiconductor (MOS) transistors to estimate radiation-induced oxide-, interface-, and border-trap charge densities. In some devices, densities of border traps (near-interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border-trap contributions to MOS radiation response and long-term reliability from interface-trap contributions. Estimates of border-trap charge densities obtained via this new dual-transistor technique agree well with trap densities inferred from 1/f noise measurements for transistors with varying channel length.

引用

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页码：1965 / 1967

页数：3

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