DUAL-TRANSISTOR METHOD TO DETERMINE THRESHOLD-VOLTAGE SHIFTS DUE TO OXIDE-TRAPPED CHARGE AND INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR DEVICES

被引：25

作者：

FLEETWOOD, DM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：466 / 468

页数：3

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