USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS

被引：163

作者：

FLEETWOOD, DM

WINOKUR, PS

SCHWANK, JR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1505

页数：9

共 41 条

[1] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES [J].

BENEDETTO, JM ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1318-1323

[2] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE [J].

BOESCH, HE ;

MCLEAN, FB ;

BENEDETTO, JM ;

MCGARRITY, JM ;

BAILEY, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1191-1197

[3]

BOESCH HE, 1988, IEEE NUCL S, V35

[4]

BROWN DB, 1987, IEEE T NUC SCI, V34, P1620

[5] TOTAL DOSE HARDNESS ASSURANCE FOR MICROCIRCUITS FOR SPACE ENVIRONMENT [J].

BUCHMAN, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1352-1358

[6]

CARLAN A, 1988 MAR M DNA POSTI

[7] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J].

DERBENWICK, GF ;

SANDER, HH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2244-2247

[8] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[9] AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS [J].

DOZIER, CM ;

FLEETWOOD, DM ;

BROWN, DB ;

WINOKUR, PS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1535-1539

[10] A SIMPLE METHOD TO IDENTIFY RADIATION AND ANNEALING BIASES THAT LEAD TO WORST-CASE CMOS STATIC RAM POSTIRRADIATION RESPONSE [J].

FLEETWOOD, DM ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1408-1413

← 1 2 3 4 5 →