AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS

被引：110

作者：

DOZIER, CM ^{[1
]}

FLEETWOOD, DM ^{[1
]}

BROWN, DB ^{[1
]}

WINOKUR, PS ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1535 / 1539

页数：5

共 20 条

[1] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES [J].

BENEDETTO, JM ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1318-1323

[2] VARIATIONS IN SEMICONDUCTOR-DEVICE RESPONSE IN A MEDIUM-ENERGY X-RAY DOSE-ENHANCING ENVIRONMENT [J].

BEUTLER, DE ;

FLEETWOOD, DM ;

BEEZHOLD, W ;

KNOTT, D ;

LORENCE, LJ ;

DRAPER, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1544-1550

[3] REDUCING ERRORS IN DOSIMETRY CAUSED BY LOW-ENERGY COMPONENTS OF CO-60 AND FLASH X-RAY SOURCES [J].

BROWN, DB ;

DOZIER, CM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1996-1999

[4] THE PHENOMENON OF ELECTRON ROLLOUT FOR ENERGY DEPOSITION AND DEFECT GENERATION IN IRRADIATED MOS DEVICES [J].

BROWN, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1240-1244

[5] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].

DOZIER, CM ;

BROWN, DB ;

THROCKMORTON, JL ;

MA, DI .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368

[6] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J].

DOZIER, CM ;

BROWN, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4382-4387

[7] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J].

DOZIER, CM ;

BROWN, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4137-4141

[8] USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS [J].

DOZIER, CM ;

BROWN, DB ;

FREITAG, RK ;

THROCKMORTON, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1324-1329

[9] PHOTON ENERGY-DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES [J].

DOZIER, CM ;

BROWN, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1694-1699

[10] USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE [J].

FLEETWOOD, DM ;

BEEGLE, RW ;

SEXTON, FW ;

WINOKUR, PS ;

MILLER, SL ;

TREECE, RK ;

SCHWANK, JR ;

JONES, RV ;

MCWHORTER, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1330-1336

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