USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS

被引：25

作者：

DOZIER, CM

BROWN, DB

FREITAG, RK

THROCKMORTON, JL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1324 / 1329

页数：6

相关论文

共 21 条

[1] BENEDETTO, 1986, IEEE T NUC SCI, V33, P1318
[2] THE PHENOMENON OF ELECTRON ROLLOUT FOR ENERGY DEPOSITION AND DEFECT GENERATION IN IRRADIATED MOS DEVICES
BROWN, DB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1240 - 1244
[3] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS
DOZIER, CM
BROWN, DB
THROCKMORTON, JL
MA, DI
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368
[4] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION
DOZIER, CM
BROWN, DB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4382 - 4387
[5] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES
DOZIER, CM
BROWN, DB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141
[6] DOZIER CM, 1982, IEEE T NUC SCI, V29, P1996
[7] ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS
FLEETWOOD, DM
WINOKUR, PS
BEEGLE, RW
DRESSENDORFER, PV
DRAPER, BL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4369 - 4375
[8] McGarrity J M, 1978, PHYSICS SIO2 ITS INT, V428
[9] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657
[10] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
MCWHORTER, PJ
WINOKUR, PS
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 133 - 135