USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE

被引:35
作者
FLEETWOOD, DM
BEEGLE, RW
SEXTON, FW
WINOKUR, PS
MILLER, SL
TREECE, RK
SCHWANK, JR
JONES, RV
MCWHORTER, PJ
机构
关键词
D O I
10.1109/TNS.1986.4334601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1330 / 1336
页数:7
相关论文
共 32 条
[1]  
BEEGLE RW, UNPUB
[2]  
BEEZHOLD W, 1986, HEART C
[3]   THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES [J].
BENEDETTO, JM ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1318-1323
[6]   ELECTRON-HOLE RECOMBINATION IN IRRADIATED SIO2 FROM A MICRODOSIMETRY VIEWPOINT [J].
BROWN, DB ;
DOZIER, CM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4142-4144
[7]   DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].
DOZIER, CM ;
BROWN, DB ;
THROCKMORTON, JL ;
MA, DI .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368
[8]   THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J].
DOZIER, CM ;
BROWN, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4382-4387
[9]   EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J].
DOZIER, CM ;
BROWN, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4137-4141
[10]   USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS [J].
DOZIER, CM ;
BROWN, DB ;
FREITAG, RK ;
THROCKMORTON, JL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1324-1329