SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE

被引：109

作者：

BOESCH, HE ^{[1
]}

MCLEAN, FB ^{[1
]}

BENEDETTO, JM ^{[1
]}

MCGARRITY, JM ^{[1
]}

BAILEY, WE ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1191 / 1197

页数：7

共 25 条

[1] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING
BENEDETTO, JM
BOESCH, HE
MCLEAN, FB
MIZE, JP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 3916 - 3920
[2] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
BENEDETTO, JM
BOESCH, HE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1318 - 1323
[3] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
BOESCH, HE
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525
[4] INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
BOESCH, HE
MCLEAN, FB
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 448 - 449
[5] HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES
BOESCH, HE
MCLEAN, FB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 3940 - 3945
[6] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
BOESCH, HE
MCLEAN, FB
MCGARRITY, JM
WINOKUR, PS
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245
[7] PHOTOCURRENT IN THERMAL SIO2 UNDER X-RAY-IRRADIATION - SIGNIFICANCE OF CONTACT INJECTION
CHIN, MR
MA, TP
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3673 - 3679
[8] CLEMENT JJ, 1976, DARPA2182 PRINC U SE
[9] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[10] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS
DERBENWICK, GF
SANDER, HH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

← 1 2 3 →