HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES

被引：67

作者：

BOESCH, HE

MCLEAN, FB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：3940 / 3945

页数：6

相关论文

共 14 条

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[2] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES
BOESCH, HE
TAYLOR, TL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1273 - 1279
[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
BOESCH, HE
MCLEAN, FB
MCGARRITY, JM
AUSMAN, GA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167
[4] TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS
BOESCH, HE
MCGARRITY, JM
MCLEAN, FB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (03) : 1012 - 1016
[5] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
BOESCH, HE
MCLEAN, FB
MCGARRITY, JM
WINOKUR, PS
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245
[6] PHOTON ENERGY-DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES
DOZIER, CM
BROWN, DB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1694 - 1699
[7] HOLE TRANSPORT IN MOS OXIDES
HUGHES, RC
EERNISSE, EP
STEIN, HJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2227 - 2233
[8] APPLICATION OF STOCHASTIC HOPPING TRANSPORT TO HOLE CONDUCTION IN AMORPHOUS SIO-2
MCLEAN, FB
AUSMAN, GA
BOESCH, HE
MCGARRITY, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1529 - 1532
[9] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS
MCLEAN, FB
BOESCH, HE
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1506 - 1512
[10] MCLEAN FB, 1978, PHYSICS SIO2 ITS INT, P19