INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：14

作者：

BOESCH, HE

MCLEAN, FB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：448 / 449

页数：2

共 15 条

[1] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

AUSMAN, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2163-2167

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[3] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[4] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].

GRISCOM, DL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533

[5] HOLE TRANSPORT IN MOS OXIDES [J].

HUGHES, RC ;

EERNISSE, EP ;

STEIN, HJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2227-2233

[6] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[7] APPLICATION OF STOCHASTIC HOPPING TRANSPORT TO HOLE CONDUCTION IN AMORPHOUS SIO-2 [J].

MCLEAN, FB ;

AUSMAN, GA ;

BOESCH, HE ;

MCGARRITY, JM .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1529-1532

[8] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J].

MCLEAN, FB ;

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1506-1512

[9] SIMPLE APPROXIMATE SOLUTIONS TO CONTINUOUS-TIME RANDOM-WALK TRANSPORT [J].

MCLEAN, FB ;

AUSMAN, GA .

PHYSICAL REVIEW B, 1977, 15 (02) :1052-1061

[10] CHEMICAL AND STRUCTURAL ASPECTS OF IRRADIATION BEHAVIOR OF SIO2-FILMS ON SILICON [J].

REVESZ, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2102-2107

← 1 2 →