CHEMICAL AND STRUCTURAL ASPECTS OF IRRADIATION BEHAVIOR OF SIO2-FILMS ON SILICON

被引：77

作者：

REVESZ, AG

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/TNS.1977.4329174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2102 / 2107

页数：6

相关论文

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