MECHANISMS OF CHARGE BUILDUP IN MOS INSULATORS

被引：33

作者：

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2144 / 2150

页数：7

共 57 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[2] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
AUSMAN, GA
MCLEAN, FB
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175
[3] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL
BERGLUND, CN
POWELL, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +
[4] EFFECTS OF X-RAY IRRADIATION ON CHARACTERISTICS OF METAL-OXIDE-SILICON STRUCTURES - (VOLTAGE SHIFT SURFACE STATES 10 TO 100 KEV E/T)
COLLINS, DR
SAH, CT
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 124 - &
[5] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[6] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION
DISTEFAN.TH
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &
[7] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS
DISTEFANO, TH
EASTMAN, DE
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (24) : 2259 - +
[8] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
DISTEFANO, TH
SHATZKES, M
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687
[9] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2
DISTEFANO, TH
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1560 - +
[10] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS
DISTEFANO, TH
SHATZKES, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 37 - 46

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