HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING

被引：132

作者：

BENEDETTO, JM ^{[1
]}

BOESCH, HE ^{[1
]}

MCLEAN, FB ^{[1
]}

MIZE, JP ^{[1
]}

机构：

[1] UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3916 / 3920

页数：5

共 12 条

[1] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[2] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

WINOKUR, PS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1239-1245

[3] EFFECT OF GAMMA-RAY IRRADIATION ON SURFACE STATES OF MOS TUNNEL-JUNCTIONS [J].

MA, TP ;

BARKER, RC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :317-321

[4]

Manzini S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P112

[5] TUNNELING IN THIN MOS STRUCTURES [J].

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :996-1003

[6] RAPID ANNEALING AND CHARGE INJECTION IN AL2O3 MIS CAPACITORS [J].

MCLEAN, FB ;

BOESCH, HE ;

WINOKUR, PS ;

MCGARRITY, JM ;

OSWALD, RB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :47-55

[7] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J].

MCLEAN, FB ;

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1506-1512

[8]

MCLEAN FB, 1976, HDLTR1765 H DIAM LAB

[9] RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K [J].

SAKS, NS ;

ANCONA, MG ;

MODOLO, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1249-1255

[10] UNIFIED MODEL OF DAMAGE ANNEALING IN CMOS, FROM FREEZE-IN TO TRANSIENT ANNEALING [J].

SANDER, HH ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2157-2162

← 1 2 →