RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K

被引：188

作者：

SAKS, NS

ANCONA, MG

MODOLO, JA

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1249 / 1255

页数：7

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