HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS

[1] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[2] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1560 - +

[3] GILL WD, 1972, J APPL PHYS, V43, P5033, DOI 10.1063/1.1661065

[4] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[5] EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (02) : 65 - 67

[6] HUGHES, 1973, PHYS REV LETT, V30, P1333

[7] GEMINATE RECOMBINATION OF X-RAY EXCITED ELECTRON-HOLE PAIRS IN ANTHRACENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (12) : 5442 - +

[8] HUGHES RC, 1973, 27 P S FREQ CONTR CH

[9] HUGHES RC, TO BE PUBLISHED

[10] HUGHES RC, 1974, 2 P INT C EL

[1] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[2] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1560 - +

[3] GILL WD, 1972, J APPL PHYS, V43, P5033, DOI 10.1063/1.1661065

[4] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[5] EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (02) : 65 - 67

[6] HUGHES, 1973, PHYS REV LETT, V30, P1333

[7] GEMINATE RECOMBINATION OF X-RAY EXCITED ELECTRON-HOLE PAIRS IN ANTHRACENE [J]. JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (12) : 5442 - +

[8] HUGHES RC, 1973, 27 P S FREQ CONTR CH

[9] HUGHES RC, TO BE PUBLISHED

[10] HUGHES RC, 1974, 2 P INT C EL