LOW-TEMPERATURE RADIATION RESPONSE OF A12O3 GATE INSULATORS

[1] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[2] CHARGE INJECTION IN MAOS SYSTEMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1634 - +

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] BOESCH HE, 1976, TM7733 HDL

[5] BOESCH HE, 1976, IEEE T NUCL SCI, V23

[6] BREWS JR, 1966, J APPL PHYS, V43, P2306

[7] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[8] DOO VY, 1970, N701498 NASA ERC REP

[9] EPSTEIN AS, 1975, HDLTR1731

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[1] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[2] CHARGE INJECTION IN MAOS SYSTEMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1634 - +

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] BOESCH HE, 1976, TM7733 HDL

[5] BOESCH HE, 1976, IEEE T NUCL SCI, V23

[6] BREWS JR, 1966, J APPL PHYS, V43, P2306

[7] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[8] DOO VY, 1970, N701498 NASA ERC REP

[9] EPSTEIN AS, 1975, HDLTR1731

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &