CORRELATION OF RADIATION EFFECTS IN TRANSISTORS AND INTEGRATED-CIRCUITS

被引：123

作者：

SEXTON, FW

SCHWANK, JR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3975 / 3981

页数：7

共 10 条

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[5]

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[6] PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].

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[7]

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[10] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1453-1460

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