THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS

被引：17

作者：

NORDSTROM, TV

GIBBON, CF

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4349 / 4353

页数：5

共 11 条

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[10]

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