Tailoring of self-assembled monolayer for polymer light-emitting diodes

被引：58

作者：

Choi, B ^{[1
]}

Rhee, J ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1398327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The choice of a self-assembled monolayer (SAM) is tailored to specifically remove water on an indium-tin oxide electrode and to reduce barrier height for long-term stability of polymer light-emitting diodes. Water, which is a major cause of long-term degradation, is shown to have entirely reversible effects on the power efficiency of the device. It is shown that the use of a SAM for the specific purposes results in a more than an order of magnitude increase in the half lifetime of the device based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. (C) 2001 American Institute of Physics.

引用

页码：2109 / 2111

页数：3

共 20 条

[1] Bliznyuk V, 1999, ADV MATER, V11, P1257, DOI 10.1002/(SICI)1521-4095(199910)11:15<1257::AID-ADMA1257>3.0.CO
[2] 2-D
[3] Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers
Campbell, IH
Rubin, S
Zawodzinski, TA
Kress, JD
Martin, RL
Smith, DL
Barashkov, NN
Ferraris, JP
[J]. PHYSICAL REVIEW B, 1996, 54 (20) : 14321 - 14324
[4] Controlling charge injection in organic electronic devices using self-assembled monolayers
Campbell, IH
Kress, JD
Martin, RL
Smith, DL
Barashkov, NN
Ferraris, JP
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3528 - 3530
[5] Improved stability of interfaces in organic light emitting diodes with high Tg materials and self-assembled monolayers
Carrard, M
Goncalves-Conto, S
Si-Ahmed, L
Adès, D
Siove, A
[J]. THIN SOLID FILMS, 1999, 352 (1-2) : 189 - 194
[6] Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes
Choi, B
Yoon, H
Lee, HH
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (04) : 412 - 414
[7] In situ characterization of the oxidative degradation of a polymeric light emitting device
Cumpston, B.H.
Parker, I.D.
Jensen, K.F.
[J]. 1997, American Inst of Physics, Woodbury, NY, United States (81)
[8] Morphological change in the degradation of A1 electrode surfaces of electroluminescent devices by fluorescence microscopy and AFM
Do, LM
Oyamada, M
Koike, A
Han, EM
Yamamoto, N
Fujihira, M
[J]. THIN SOLID FILMS, 1996, 273 (1-2) : 209 - 213
[9] In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope
Do, LM
Kim, KJ
Zyung, T
Shim, HK
Kim, JJ
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3470 - 3472
[10] Molecular level alignment at organic semiconductor-metal interfaces
Hill, IG
Rajagopal, A
Kahn, A
Hu, Y
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (05) : 662 - 664

← 1 2 →