Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes

被引：69

作者：

Choi, B ^{[1
]}

Yoon, H ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SF6 plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance. (C) 2000 American Institute of Physics. [S0003-6951(00)04104-8].

引用

页码：412 / 414

页数：3

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