Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium-tin-oxide anodes

被引：91

作者：

Kim, JS

Cacialli, F

Cola, A

Gigli, G

Cingolani, R

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] CNR, IME, Ist Nuovi Mat Elettr, Lecce, Italy

[3] Univ Lecce, Dept Mat Sci, INFM, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report investigations of the electronic transport properties carried out by means of the Hall technique for indium-tin-oxide thin films on glass after a variety of surface treatments. We find that oxygen-plasma treatments induce a significant increase in the carrier concentration, and a less significant decrease of mobilities with respect to "as-received" or aquaregia treated substrates. We consider that this is indicative of an increased concentration of defects, as a result of the plasma exposure. (C) 1999 American Institute of Physics. [S0003-6951(99)04827-5].

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页码：19 / 21

页数：3

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