MICROGRAIN STRUCTURE INFLUENCE ON ELECTRICAL CHARACTERISTICS OF SPUTTERED INDIUM TIN OXIDE-FILMS

被引：58

作者：

HIGUCHI, M ^{[1
]}

UEKUSA, S ^{[1
]}

NAKANO, R ^{[1
]}

YOKOGAWA, K ^{[1
]}

机构：

[1] TOSHIBA CO LTD,MFG ENGN RES CTR,ISOGO KU,YOKOHAMA 235,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.355093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between micrograin structures and electrical characteristics of sputtered indium tin oxide (ITO) films was investigated. Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance measurement and Hall effect measurement. Low resistivity ITO films had domain structures. One domain consisted of many sputter grains having the same orientation. The resistivity decreased with increasing domain size. The domain boundary might cause scattering for conduction electrons. Therefore, larger domain ITO films had a higher Hall mobility. The minimum resistivity was 1.8 X 10(-4) OMEGA Cm, depo-sited at a sputtering voltage of -250 V and a 250-degrees-C deposition temperature. The electron conduction mechanism in domain structured ITO films was taken into consideration.

引用

页码：6710 / 6713

页数：4

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