Shallow versus deep hydrogen states in ZnO and HgO

被引:44
作者
Cox, SFJ [1 ]
Davis, EA
King, PJC
Gil, JM
Alberto, HV
Vilao, RC
Duarte, JP
de Campos, NA
Lichti, RL
机构
[1] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
[2] UCL, Dept Phys & Astron, London WC1E 6BT, England
[3] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England
[4] Univ Coimbra, Dept Phys, P-3004516 Coimbra, Portugal
[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
关键词
D O I
10.1088/0953-8984/13/40/316
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The muonium states mimicking interstitial hydrogen in ZnO and HgO are compared. Whereas in ZnO a theoretically predicted shallow donor state is confirmed, in HgO we find a considerably deeper state. The respective ionization temperatures are around 40 K and 150 K and the donor ionization energies are 19 +/-1 and 136 +/-3 meV, deduced from the temperature dependence of the mu SR (muon spin-rotation) signal amplitudes. The mu SR spectra provide a comprehensive characterization of the undissociated paramagnetic states: the hyperfine parameters, which measure the electron spin density on and near the muon, differ by a factor of similar to 30. These define a hydrogenic radius of 1.1 mn in ZnO but indicate a much more compact electronic wavefunction in HgO, more akin to those of Mu* and the AA9 centre in Si. These data should largely carry over to hydrogen as a guide to its electrical activity in these materials.
引用
收藏
页码:9001 / 9010
页数:10
相关论文
共 30 条
[11]   Novel muonium state in CdS [J].
Gil, JM ;
Alberto, HV ;
Vilao, RC ;
Duarte, JP ;
Mendes, PJ ;
Ferreira, LP ;
de Campos, NA ;
Weidinger, A ;
Krauser, J ;
Niedermayer, C ;
Cox, SFJ .
PHYSICAL REVIEW LETTERS, 1999, 83 (25) :5294-5297
[12]  
GIL JM, 2001, UNPUB J PHYS CONDENS
[13]  
Gorelkinskii Yu. V., 1987, Soviet Technical Physics Letters, V13, P45
[14]   Dynamics of negative muonium in n-type silicon [J].
Hitti, B ;
Kreitzman, SR ;
Estle, TL ;
Bates, ES ;
Dawdy, MR ;
Head, TL ;
Lichti, RL .
PHYSICAL REVIEW B, 1999, 59 (07) :4918-4924
[15]   DEEP STATE OF HYDROGEN IN CRYSTALLINE SILICON - EVIDENCE FOR METASTABILITY [J].
HOLM, B ;
NIELSEN, KB ;
NIELSEN, BB .
PHYSICAL REVIEW LETTERS, 1991, 66 (18) :2360-2363
[16]   HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J].
HUTSON, AR .
PHYSICAL REVIEW, 1957, 108 (02) :222-230
[17]   INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON [J].
JOHNSON, NM ;
HERRING, C ;
VAN DE WALLE, CG .
PHYSICAL REVIEW LETTERS, 1994, 73 (01) :130-133
[18]  
JONES R, 2000, DIFFUSION DEFECT D B, V71
[19]   SI-29 HYPERFINE-STRUCTURE OF ANOMALOUS MUONIUM IN SILICON - PROOF OF THE BOND-CENTERED MODEL [J].
KIEFL, RF ;
CELIO, M ;
ESTLE, TL ;
KREITZMAN, SR ;
LUKE, GM ;
RISEMAN, TM ;
ANSALDO, EJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (03) :224-226
[20]   MUON-SPIN-RESONANCE STUDY OF MUONIUM DYNAMICS IN SI AND ITS RELEVANCE TO HYDROGEN [J].
KREITZMAN, SR ;
HITTI, B ;
LICHTI, RL ;
ESTLE, TL ;
CHOW, KH .
PHYSICAL REVIEW B, 1995, 51 (19) :13117-13137