Experimental determination of thermal profiles during laser spike annealing with quantitative comparison to 3-dimensional simulations

被引：19

作者：

Iyengar, Krishna ^{[2
]}

Jung, Byungki ^{[1
]}

Willemann, Michael ^{[1
]}

Clancy, Paulette ^{[3
]}

Thompson, Michael O. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Theoret & Appl Mech, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 21期

关键词：

CONDUCTIVITY;

D O I：

10.1063/1.4717745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film platinum resistors were used to directly measure temperature profiles during laser spike annealing (LSA) with high spatial and temporal resolution. Observed resistance changes were calibrated to absolute temperatures using the melting points of the substrate silicon and thin gold films. Both the time-dependent temperature experienced by the sample during passage of the focussed laser beam and profiles across the spatially dependent laser intensity were obtained with sub-millisecond time resolution and 50 mu m spatial resolution. Full 3-dimensional simulations incorporating both optical and thermal variations of material parameters were compared with these results. Accounting properly for the specific material parameters, good agreement between experiments and simulations was achieved. Future temperature measurements in complex environments will permit critical evaluation of LSA simulations methodologies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717745]

引用

页数：3

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