On the properties of indium doped ZnO thin films

被引:144
作者
Kumar, PMR [1 ]
Kartha, CS
Vijayakumar, KP
Abe, T
Kashiwaba, Y
Singh, F
Avasthi, DK
机构
[1] Cochin Univ Sci & Technol, Dept Phys, Thin Film Photovoltaic Div, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
[3] Ctr Nucl Sci, New Delhi 110067, India
关键词
D O I
10.1088/0268-1242/20/2/003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of undoped and In-doped zinc oxide, prepared using chemical spray pyrolysis, were investigated using x-ray diffraction, optical transmission and absorption spectra, SEM, resistivity measurements, x-ray photoelectron spectroscopy and photoluminescence studies. A doping level of 1 at% indium was found to give lowest resistive films and enhanced optical transmission. But increasing the doping percentage resulted in lower optical transmission. XPS investigations revealed the presence of elemental chlorine in the In-doped film. Undoped ZnO thin films gave a strong blue-green emission. Doping with indium apparently resulted in a competitive phenomenon that overshadows the blue-green emission and gave rise to three emissions at 408, 590 and 688 nm.
引用
收藏
页码:120 / 126
页数:7
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