Temperature-dependent photoluminescence in porous amorphous silicon

被引：10

作者：

Bustarret, E

Sauvain, E

Ligeon, M

Rosenbauer, M

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

[2] CNRS,F-38402 ST MARTIN DHERES,FRANCE

[3] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

luminescence; amorphous materials; silicon; transmission electron microscopy;

D O I：

10.1016/0040-6090(95)08084-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Having shown by transmission electron microscopy that a suitable electrolytic processing of boron-doped amorphous hydrogenated silicon (a-Si:H) yields porous amorphous films with a nanometre-scale microstructure similar to that of highly porous p-type crystalline silicon layers (PcSL), we report and discuss the qualitative similarities and quantitative differences between the temperature dependence of the time-resolved and steady-state photoluminescence (PL) in both materials.

引用

页码：134 / 137

页数：4

共 16 条

[1] COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLY OXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON [J].