LUMINESCENCE PROPERTIES AND SURFACE-TOPOGRAPHY OF POROUS SILICON

被引：10

作者：

MAUCKNER, G ^{[1
]}

WALTER, T ^{[1
]}

BAIER, T ^{[1
]}

THONKE, K ^{[1
]}

SAUER, R ^{[1
]}

HOUBERTZ, R ^{[1
]}

MEMMERT, U ^{[1
]}

BEHM, RJ ^{[1
]}

机构：

[1] UNIV ULM,OBERFLACHENCHEM & KATALYSE ABT,D-89069 ULM,GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90135-A

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report optical and structural properties of porous silicon by steady-state and time-resolved photoluminescence (PL) and scanning tunneling microscopy (STM). The PL decay is non-exponential and the lifetimes are strongly dependent on temperature. Our experimental data of the recombination lifetime under variation of temperature, emission energy, and excitation density are discussed within the models of tail-state recombination, direct interband, and quantum-confined exciton recombination. Our optical and structural results support the model of quantum-confined carriers in crystalline Si structures.

引用

页码：211 / 215

页数：5

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