POTENTIAL-DEPENDENT ETCHING OF SI(111) SURFACES IN NH4F SOLUTIONS STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：18

作者：

HOUBERTZ, R

MEMMERT, U

BEHM, RJ

机构：

[1] Abteilung für Oberflächenchemie und Katalyse, Universität Ulm, D-W-7900 Ulm

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial phases of anodic Si(111) etching in 40% NH4F solution at potentials between -0.97 V(Ag/AgCl) (open circuit potential) and +0.5 V(Ag/AgCl) were investigated by scanning tunneling microscopy. Pores of several hundred angstrom width and 10-30 angstrom depth, increasing with more anodic potentials, signal the beginning formation of a porous surface. The observation of atomic steps proves the crystallinity of the new surface and the absence of an amorphous deposit layer under these conditions.

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页码：2516 / 2518

页数：3

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