PICOSECOND LUMINESCENCE DECAY IN POROUS SILICON

被引：33

作者：

MATSUMOTO, T

DAIMON, M

FUTAGI, T

MIMURA, H

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Kanagawa, 229, 5-10-1 Fuchinobe, Sagamihara

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期

关键词：

POROUS SILICON; PHOTOLUMINESCENCE; PICOSECOND; NANOSECOND; DECAY; QUANTUM SIZE EFFECT; AMORPHOUS;

D O I：

10.1143/JJAP.31.L619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Picosecond luminescence decay is observed for the first time in porous Si. This decay consists of two exponential decay components that become large with decreasing emission energy. Besides the picosecond luminescence decay, nanosecond luminescence decay was also observed. This shows nonexponential decay behavior with dominant components between 100 ns and 1-mu-s. This also becomes large with decreasing emission energy. Based on our results, the luminescence in porous Si seems to originate partially from the amorphous phase.

引用

页码：L619 / L621

页数：3

共 24 条

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