Thermoelectric Performance of Half-Heusler TiNiSn Alloys Fabricated by Solid-Liquid Reaction Sintering

被引:10
作者
Kimura, Yoshisato [1 ]
Asami, Chihiro [2 ]
Chai, Yaw-Wang [1 ]
Mishima, Yoshinao [1 ]
机构
[1] Tokyo Inst Technol Mat Sci & Engn, Midori Ku, 4259-G3-23 Nagatsuta, Yokohama, Kanagawa 2268502, Japan
[2] Nippon Steel Corp Ltd, Tokyo, Japan
来源
PRICM 7, PTS 1-3 | 2010年 / 654-656卷
基金
日本学术振兴会;
关键词
Thermoelectric materials; half-Heusler compounds; diffusion path; phase equilibrium; solid-liquid reaction sintering; COMPOUND; TI;
D O I
10.4028/www.scientific.net/MSF.654-656.2795
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new fabrication process was proposed for half-Heusler type TiNiSn thermoelectric alloys. Based on the result that the TiNiSn phase can be formed easily at the Sn(Liquid)/TiNi(Solid) interface, the liquid-solid reaction-sintering process was developed using TiNi and Sn powders. The TiNi compound powders were prepared by the atomization method using argon gas atmosphere. We have fabrictaed nearly single-phase TiNiSn alloys and evaluated their thermoelectrical properties; the presnt TiNiSn alloys have large electrical power factor of about 3.5 mWm(-1)K(-2), and the maximum value of dimensionless figure of merit, ZT = 0.67, can be achieved at around 700 K even without tuning of the carrier concentration through alloying elements.
引用
收藏
页码:2795 / +
页数:2
相关论文
共 6 条
[1]   GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
BRANDT, NB ;
MOSHCHALKOV, VV ;
KOZYRKOV, VV ;
SKOLOZDRA, RV ;
BELOGOROKHOV, AI .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171
[2]  
Asami C, 2009, MATER RES SOC SYMP P, V1128, P179
[3]   Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx [J].
Bhattacharya, S ;
Pope, AL ;
Littleton, RT ;
Tritt, TM ;
Ponnambalam, V ;
Xia, Y ;
Poon, SJ .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2476-2478
[4]   The effects of quaternary additions on thermoelectric properties of TiNiSn-based half-Heusler alloys [J].
Katayama, T ;
Kim, SW ;
Kimura, Y ;
Mishima, Y .
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (11) :1160-1165
[5]  
Kimura Y, 2006, MATER RES SOC SYMP P, V886, P331
[6]   High-temperature thermoelectric properties of Nb-doped MNiSn (M = Ti, Zr) half-Heusler compound [J].
Muta, Hiroaki ;
Kanemitsu, Takanori ;
Kurosaki, Ken ;
Yamanaka, Shinsuke .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 469 (1-2) :50-55