GaN enhancement mode metal-oxide semiconductor field effect transistors

被引：6

作者：

Irokawa, Y ^{[1
]}

Nakano, Y ^{[1
]}

Ishiko, M ^{[1
]}

Kachi, T ^{[1
]}

Kim, J ^{[1
]}

Ren, F ^{[1
]}

Gila, BP ^{[1
]}

Onstine, AH ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Pan, CC ^{[1
]}

Chen, GT ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

INVERSION BEHAVIOR;

D O I：

10.1002/pssc.200461280

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The initial demonstration of an enhancement mode MgO/p-GaN metal-oxide semiconductor field effect transistor (MOSFET) utilizing Si+ ion implanted regions under the source and drain to provide a source of minority carriers for inversion was reported. The breakdown voltage for an 80 nm thick MgO gate dielectric was similar to 14 V, corresponding to a breakdown field strength of 1.75 MVcm(-1) and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage > 15 V. Inversion of the channel was achieved for gate voltages above 6 V. The maximum transconductance was 5.4 mu Smm(-1) at a drain-source voltage of 5 V. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2668 / 2671

页数：4

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