Gate breakdown characteristics of MgO/GaN MOSFETs

被引：9

作者：

Cho, H

Lee, KP

Gila, BP

Abernathy, CR

Pearton, SJ

Ren, F ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Miryang Natl Univ, Dept Mat Engn, Kyungnam 627702, South Korea

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(03)00090-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular beam epitaxy deposited MgO shows low interface state densities (2-3 x 10(11) cm(-2) eV(-1)) on GaN and shows excellent long-term stability in MOS structures on GaN. The effects of oxide thickness and gate length on the threshold voltage and breakdown voltage of MgO/GaN MOSFETs were examined using a drift-diffusion model. Gate breakdown voltage is >100 V for gate length >0.5 mum and MgO thickness >600 Angstrom. The threshold voltage scales linearly with oxide thickness and is <2 V for oxide thickness <800 Angstrom and gate lengths <0.6 mum. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1597 / 1600

页数：4

共 44 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].