Semiconductor nanoparticles for quantum devices

被引：21

作者：

Erokhin, V

Carrara, S

Amenitch, H

Bernstorff, S

Nicolini, C

机构：

[1] El B A Fdn, I-16153 Genoa, Italy

[2] Polo Nazl Bioelettron, I-57030 Marciana Marina, Li, Italy

[3] Univ Genoa, Inst Biophys, I-16153 Genoa, Italy

[4] Small Angle Beamline Elettra Synchrotrone, Trieste, Italy

来源：

NANOTECHNOLOGY | 1998年 / 9卷 / 03期

关键词：

D O I：

10.1088/0957-4484/9/3/004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Semiconductor nanoparticles were synthesized by exposing fatty acid salt Langmuir-Blodgell films to the atmosphere of H2S. The particle sizes were characterized by small-angle x-ray scattering of their solutions using synchrotron radiation source at higher resolution, as it was impossible previously to study it with usual laboratory x-ray sources. The particle sizes were found to correspond with the demands of single-electron and quantum junctions. Semiconductor heterostructures were grown by self-aggregation of these particles of different types. Electrical properties of these nanostructures were studied by using STM. Voltage-current characteristics revealed the presence of differential negative resistance. Measurements confirmed the formation of semiconductor superlattices directed towards a development of new nanodevices, such as tunnelling diodes and semiconductor lasers.

引用

页码：158 / 161

页数：4

共 25 条

[1] HIGH-FLUX BEAMLINE FOR SMALL-ANGLE X-RAY-SCATTERING AT ELETTRA [J].