Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces

被引：313

作者：

Riedl, C. ^{[1
]}

Starke, U. ^{[1
]}

Bernhardt, J. ^{[2
]}

Franke, M. ^{[2
]}

Heinz, K. ^{[2
]}

机构：

[1] Max Planck Inst Festkorperforschung, D-70569 Stuttgart, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Festkorperphys, D-91058 Erlangen, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.76.245406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the interface between graphene and 4H-SiC(0001) as investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). It is characterized by the so-called (6 root 3 X 6 root 3) R30 degrees reconstruction, whose structural properties are still controversially discussed but at the same time are crucial for the controlled growth of homogeneous high-quality large-terrace graphene surfaces. We discuss the role of three observed phases with periodicities (6 root 3 X 6 root 3)R30 degrees, (6 X 6), and (5 X 5). Their LEED intensity levels and spectra strongly depend on the surface preparation procedure applied. The graphitization process imprints distinct features in the STM images as well as in the LEED spectra. The latter have the potential for an easy and practicable determination of the number of graphene layers by means of LEED.

引用

页数：8

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