Ubiquitous mechanisms of energy dissipation in noncontact atomic force microscopy

被引:46
作者
Ghasemi, S. Alireza [1 ,2 ]
Goedecker, Stefan [1 ,2 ]
Baratoff, Alexis [1 ,2 ]
Lenosky, Thomas [3 ]
Meyer, Ernst [1 ,2 ]
Hug, Hans J. [4 ]
机构
[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
[2] Univ Basel, Natl Ctr Res Nanoscale Sci, CH-4056 Basel, Switzerland
[3] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
[4] Swiss Fed Lab Mat Testing & Res, CH-8600 Dubendorf, Switzerland
关键词
Atomistic simulations - Different structure - Dissipation mechanism - Local minimums - Lower-energy structure - Metastabilities - Noncontact atomic force microscopy - Thermal activation;
D O I
10.1103/PhysRevLett.100.236106
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Atomistic simulations considering larger tip structures than hitherto assumed reveal novel dissipation mechanisms in noncontact atomic force microscopy. The potential energy surfaces of realistic silicon tips exhibit many energetically close local minima that correspond to different structures. Most of them easily deform, thus causing dissipation arising from hysteresis in force versus distance characteristics. Furthermore, saddle points which connect local minima can suddenly switch to connect different minima. Configurations driven into metastability by the tip motion can thus suddenly access lower energy structures when thermal activation becomes allowed within the time required to detect the resulting average dissipation.
引用
收藏
页数:4
相关论文
共 21 条
[1]   Energy dissipation in tapping-mode atomic force microscopy [J].
Cleveland, JP ;
Anczykowski, B ;
Schmid, AE ;
Elings, VB .
APPLIED PHYSICS LETTERS, 1998, 72 (20) :2613-2615
[2]  
DILL KA, 2003, MOL DRIVING FORCES, P50401
[4]   Questioning the existence of a unique ground-state structure for Si clusters [J].
Hellmann, Waldemar ;
Hennig, R. G. ;
Goedecker, Stefan ;
Umrigar, C. J. ;
Delley, Bernard ;
Lenosky, T. .
PHYSICAL REVIEW B, 2007, 75 (08)
[5]   Efficient methods for finding transition states in chemical reactions: Comparison of improved dimer method and partitioned rational function optimization method [J].
Heyden, A ;
Bell, AT ;
Keil, FJ .
JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (22)
[6]   Mechanical manifestations of rare atomic jumps in dynamic force microscopy [J].
Hoffmann, R. ;
Baratoff, A. ;
Hug, H. J. ;
Hidber, H. R. ;
von Loehneysen, H. ;
Guentherodt, H-J .
NANOTECHNOLOGY, 2007, 18 (39)
[7]   Probing the Si(001) surface with a Si tip:: An ab initio study [J].
Kantorovich, Lev ;
Hobbs, Chris .
PHYSICAL REVIEW B, 2006, 73 (24)
[8]   General theory of microscopic dynamical response in surface probe microscopy: From imaging to dissipation [J].
Kantorovich, LN ;
Trevethan, T .
PHYSICAL REVIEW LETTERS, 2004, 93 (23)
[9]   Highly optimized tight-binding model of silicon [J].
Lenosky, TJ ;
Kress, JD ;
Kwon, I ;
Voter, AF ;
Edwards, B ;
Richards, DF ;
Yang, S ;
Adams, JB .
PHYSICAL REVIEW B, 1997, 55 (03) :1528-1544
[10]   Origin of p(2 x 1) phase on Si(001) by noncontact atomic force microscopy at 5 k -: art. no. 106104 [J].
Li, YJ ;
Nomura, H ;
Ozaki, N ;
Naitoh, Y ;
Kageshima, M ;
Sugawara, Y ;
Hobbs, C ;
Kantorovich, L .
PHYSICAL REVIEW LETTERS, 2006, 96 (10)