Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

被引：28

作者：

Ko, T. S. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Zhuo, L. F. ^{[1
,2
]}

Wang, W. L. ^{[3
]}

Liang, M. H. ^{[3
]}

Kuo, H. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

Chang, Li ^{[3
]}

Lin, D. Y. ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

[4] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期

关键词：

ROOM-TEMPERATURE; THIN-FILMS; LUMINESCENCE; SAPPHIRE; SUPERLATTICES; EMISSION; EXCITONS; ZNO/(MG;

D O I：

10.1063/1.3488898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We reported optical properties of a-plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy of a-plane ZnO/ZnMgO MQWs kept invariant in the power-dependent photoluminescence (PL) measurement, indicating the nonpolar characteristics due to the lack of built-in electric fields. Large exciton binding energy of 68 meV was deduced and no apparent S-curve appeared in temperature-dependent PL results, demonstrating less carrier localization effect in a-plane ZnO/ZnMgO MQWs. Large difference in electronic transition levels of 45 meV due to the valence band splitting was observed in the polarization dependent absorption spectrum. Furthermore, the high degree of polarization of 92% and 56% at 20 and 300 K in PL emission of a-plane ZnO/ZnMgO MQWs were obtained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488898]

引用

页数：5

共 26 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2] Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature [J].

Chen, Jun-Rong ;

Lu, Tien-Chang ;

Wu, Yung-Chi ;

Lin, Shiang-Chi ;

Liu, Wei-Rein ;

Hsieh, Wen-Feng ;

Kuo, Chien-Cheng ;

Lee, Cheng-Chung .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[3] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Gainer, GH ;

Fischer, AJ ;

Song, JJ ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1370-1372

[4] Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity [J].

Christmann, Gabriel ;

Butte, Raphael ;

Feltin, Eric ;

Carlin, Jean-Francois ;

Grandjean, Nicolas .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

[5] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[6] Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy [J].

Han, S. K. ;

Hong, S. K. ;

Lee, J. W. ;

Lee, J. Y. ;

Song, J. H. ;

Nam, Y. S. ;

Chang, S. K. ;

Minegishi, T. ;

Yao, T. .

JOURNAL OF CRYSTAL GROWTH, 2007, 309 (02) :121-127

[7] Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells [J].

Kuokstis, E ;

Chen, CQ ;

Gaevski, ME ;

Sun, WH ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Maruska, HP ;

Hill, DW ;

Chou, MC ;

Gallagher, JJ ;

Chai, B .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4130-4132

[8] Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition [J].

Liang, Mei-Hui ;

Ho, Yen-Teng ;

Wang, Wei-Lin ;

Peng, Chun-Yen ;

Chang, Li .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :1847-1852

[9] Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates [J].

Makino, T ;

Chia, CH ;

Tuan, NT ;

Sun, HD ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Tamura, K ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :975-977

[10] Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells [J].