Electrode dependences of switching endurance properties of lead-zirconate-titanate thin-film capacitors

被引:54
作者
Aoki, K
Fukuda, Y
Numata, K
Nishimura, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期
关键词
PZT; remanent polarization; switching; fatigue; depletion layer;
D O I
10.1143/JJAP.35.2210
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching endurance properties of lead-zirconate-titanate thin-film capacitors with gold, platinum and iridium top electrodes were investigated using a pulse switching characterization technique. Lead-zirconate-titanate capacitor structure formed with Ir top and bottom electrodes exhibited superior switching endurance to Au/PZT/Ir and Pt/PZT/Ir capacitors. The difference between switched and nonswitched polarizations of an Ir/PZT/Ir capacitor reversed by bipolar pulses was more than 38 mu C/cm(2) after 2 x 10(9) switching cycles. Nonswitched polarization of this capacitor for negative read-pulses decreased gradually with increase in the number of switching cycles. When positive and negative unipolar pulses, and DC biases were applied to the top electrodes of Pt/PZT/Ir and Ir/PZT/Ir capacitors, remanent polarizations of each capacitor were not changed significantly. However, nonswitched polarizations for negative read-pulses decreased with increase in the number of negative unipolar pulses applied or DC bias application time. Drastic decrease in remanent polarization of a Pt/PZT/Ir capacitor was caused only by bipolar pulse application. The reduction of nonswitched polarization for negative read-pulses suggested the formation of depletion-layer capacitances at the interfaces between top electrodes and PZT layers.
引用
收藏
页码:2210 / 2215
页数:6
相关论文
共 12 条
[1]   INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].
ALSHAREEF, HN ;
BELLUR, KR ;
KINGON, AI ;
AUCIELLO, O .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :239-241
[2]   ELECTRICAL-PROPERTIES OF FERROELECTRIC THIN-FILM CAPACITORS WITH HYBRID (PT,RUO2) ELECTRODES FOR NONVOLATILE MEMORY APPLICATIONS [J].
ALSHAREEF, HN ;
AUCIELLO, O ;
KINGON, AI .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :2146-2154
[3]   EFFECTS OF TITANIUM BUFFER LAYER ON LEAD-ZIRCONATE-TITANATE CRYSTALLIZATION PROCESSES IN SOL-GEL DEPOSITION TECHNIQUE [J].
AOKI, K ;
FUKUDA, Y ;
NUMATA, K ;
NISHIMURA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01) :192-195
[4]   AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL [J].
EVANS, JT ;
WOMACK, R .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1171-1175
[5]  
LARSEN PK, 1995, SCI TECHNOLOGY ELECT, V284, P201
[6]   ELECTRICAL CHARACTERISTICS OF FERROELECTRIC PZT THIN-FILMS FOR DRAM APPLICATIONS [J].
MOAZZAMI, R ;
HU, CM ;
SHEPHERD, WH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2044-2049
[7]  
NAKAMURA T, 1994, APPL PHYS LETT, V65, P1552
[8]  
Petrovsky V. I., 1993, Integrated Ferroelectrics, V3, P59, DOI 10.1080/10584589308216700
[9]   COMPARISON OF ELECTROOPTIC LEAD-LANTHANUM ZIRCONATE TITANATE FILMS ON CRYSTALLINE AND GLASS SUBSTRATES [J].
PRESTON, KD ;
HAERTLING, GH .
APPLIED PHYSICS LETTERS, 1992, 60 (23) :2831-2833
[10]   FERROELECTRIC MEMORIES [J].
SCOTT, JF ;
DEARAUJO, CAP .
SCIENCE, 1989, 246 (4936) :1400-1405